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首页> 外文OA文献 >An investigation of the influence of different transparent conducting oxide substrates/front contacts on the performance of CdS/CdTe thin-film solar cells
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An investigation of the influence of different transparent conducting oxide substrates/front contacts on the performance of CdS/CdTe thin-film solar cells

机译：研究不同的透明导电氧化物衬底/正面接触对CdS / CdTe薄膜太阳能电池性能的影响

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CdS/CdTe/Au thin film solar cells have been fabricated on different transparent conducting oxide (TCO) substrates/front contacts to study the influence of these different TCOs on the performance of the devices. The TCOs used were ZnO, ZnO:Al and SnO2:F. Under dark condition, all three device structures of the type glass/TCO/n-CdS/n-CdTe/Au n-n heterojunction+Schottky barrier, show interesting rectifying behaviors with rectification factors (RF) in the range (102.5 – 105.0), Schottky barrier heights (ΦB) greater than (0.69 – 0.81) eV, diode ideality factors (n) in the range (1.85 – 2.12), reverse saturation current densities (J0) in the range (3.18×10-6 – 3.18×10-8) Acm-2, series resistances (Rs) in the range (507 – 1114) Ω and shunt resistances (Rsh) in the range (0.84 – 271) MΩ. The device structures glass/SnO2:F/n-CdS/n-CdTe/Au and glass/FTO/ZnO:Al/n-CdS/n-CdTe/Au show the best performance with equal J0 of 3.18×10-8 Acm-2, equal ΦB > 0.81 eV, RF of 104.9 and 105.0, n value of 2.01 and 2.12, Rs of 615 Ω and 507 Ω and Rsh of 197 and 271 MΩ respectively. The device structure with ZnO shows the least performance. Under AM1.5 illumination, the device structure glass/SnO2:F/n-CdS/n-CdTe/Au shows the best solar cell performance with open-circuit voltage of 630 mV, short-circuit current density of 23.5 mAcm-2, fill factor of 0.44 and conversion efficiency of 6.5%, and is followed by the device structure with ZnO:Al showing a conversion efficiency of 6.0%. Suggested energy band diagrams of the devices as well as possible reasons for the observed trends in performance are presented and discussed.
机译：CdS / CdTe / Au薄膜太阳能电池已经在不同的透明导电氧化物（TCO）基板/正面触点上制造，以研究这些不同的TCO对器件性能的影响。使用的TCO为ZnO，ZnO：Al和SnO2：F。在黑暗条件下，玻璃/ TCO / n-CdS / n-CdTe / Au nn异质结+肖特基势垒的所有三种器件结构均显示出有趣的整流行为，其整流因子（RF）范围为（102.5 – 105.0），肖特基势垒高度（ΦB）大于（0.69 – 0.81）eV，二极管理想系数（n）在（1.85 – 2.12）范围内，反向饱和电流密度（J0）在（3.18×10-6 – 3.18×10- 8）Acm-2，串联电阻（Rs）在（507 – 1114）Ω范围内，分流电阻（Rsh）在（0.84 – 271）MΩ范围内。器件结构玻璃/ SnO2：F / n-CdS / n-CdTe / Au和玻璃/ FTO / ZnO：Al / n-CdS / n-CdTe / Au表现出最佳性能，J0为3.18×10-8 Acm -2，等于ΦB> 0.81 eV，RF为104.9和105.0，n值为2.01和2.12，Rs为615Ω和507Ω，Rsh分别为197和271MΩ。具有ZnO的器件结构表现出最低的性能。在AM1.5照明下，器件结构玻璃/ SnO2：F / n-CdS / n-CdTe / Au表现出最佳的太阳能电池性能，开路电压为630 mV，短路电流密度为23.5 mAcm-2，填充系数为0.44，转换效率为6.5％，随后是ZnO：Al的器件结构，转换效率为6.0％。提出并讨论了设备的建议能带图以及观察到的性能趋势的可能原因。

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